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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD882
DESCRIPTION *With TO-126 package *Complement to type 2SB772 APPLICATIONS *Audio amplifier *Voltage regulator *DC-DC converter *Relay driver
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
*
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 40 30 5 3 7 1 W UNIT V V V A A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=2.0A; IB=0.2A IC=2.0A ;IB=0.2A VCB=30V; IE=0 VEB=3V; IC=0 IC=20mA ; VCE=2V IC=1A ; VCE=2V IC=0.1A ; VCE=5V f=1MHz ; VCB=10V 30 60 90 45 MIN 30 TYP.
2SD882
MAX
UNIT V
0.5 2.0 1 1
V V A A
400 MHz pF
hFE-2 Classifications R 60-120 Q 100-200 P 160-320 E 200-400
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD882
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD882
4


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